Reference Only

SIA910EDJ-T1-GE3

MOSFETs 12V Vds 8V Vgs PowerPAK SC-70

Manufacturer:

Mfr Part:
SIA910EDJ-T1-GE3

TTI Part:
SIA910EDJ-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSC-70-6
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage12 V
Id - Continuous Drain Current4.5 A
Rds On - Drain-Source Resistance28 mOhms
Vgs - Gate-Source Voltage- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage400 mV
Qg - Gate Charge16 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation7.8 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationDual
Fall Time12 ns
Forward Transconductance - Min23 S
Product TypeMOSFETs
Rise Time12 ns
SeriesSIA
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time25 ns
Typical Turn-On Delay Time10 ns
Part # AliasesSIA910EDJ-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

36.000In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 3.000 / Multiples: 3.000)
Quantity Unit PriceExt. Price
0,176 €528,00 €
0,173 €1.038,00 €
0,171 €1.539,00 €
0,168 €2.520,00 €
0,165 €4.950,00 €
Need more?

My Notes

Sign into see notes.