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SIHB080N60E-GE3

MOSFETs N-CH SINGLE 650V TO263

Manufacturer:

Mfr Part:
SIHB080N60E-GE3

TTI Part:
SIHB080N60E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current35 A
Rds On - Drain-Source Resistance80 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge63 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation227 W
Channel ModeEnhancement
PackagingTube
Fall Time31 ns
Forward Transconductance - Min4.6 S
Product TypeMOSFETs
Rise Time96 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time37 ns
Typical Turn-On Delay Time31 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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