Reference Only

SIHB100N65E-GE3

MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V

Manufacturer:

Mfr Part:
SIHB100N65E-GE3

TTI Part:
SIHB100N65E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance100 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge41 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation208 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time32 ns
Forward Transconductance - Min12 S
Product TypeMOSFETs
Rise Time68 ns
SeriesSIHB E
SubcategoryTransistors
Transistor TypeN-Channel Power MOSFET
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time28 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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