Reference Only

SIHB12N60ET1-GE3

MOSFETs N-Channel 600V

Manufacturer:

Mfr Part:
SIHB12N60ET1-GE3

TTI Part:
SIHB12N60ET1-GE3

EDA / CAD Models

Alternate Part Number

SIHB12N60E-GE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance380 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge29 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation147 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time19 ns
Product TypeMOSFETs
Rise Time19 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

1.600
On Order
1.600 expected 26-Aug-26
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Reel

(Minimum: 800 / Multiples: 800)
Quantity Unit PriceExt. Price
0,83 €664,00 €
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