Reference Only

SIHB22N60EF-GE3

MOSFETs Nch 600V Vds 30V Vgs TO-263; w/diode

Manufacturer:

Mfr Part:
SIHB22N60EF-GE3

TTI Part:
SIHB22N60EF-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current19 A
Rds On - Drain-Source Resistance182 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge96 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation179 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time25 ns
Forward Transconductance - Min5.8 S
Product TypeMOSFETs
Rise Time21 ns
SeriesSIHB EF
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time58 ns
Typical Turn-On Delay Time15 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 28 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 1.000 / Multiples: 50)
Quantity Unit PriceExt. Price
1,65 €1.650,00 €
Need more?

My Notes

Sign into see notes.