Reference Only

SIHB6N80AE-GE3

MOSFETs N-CH SINGLE 850V TO263

Manufacturer:

Mfr Part:
SIHB6N80AE-GE3

TTI Part:
SIHB6N80AE-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current5 A
Rds On - Drain-Source Resistance826 mOhms
Vgs - Gate-Source Voltage- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge22.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation78 W
Channel ModeEnhancement
PackagingTube
Fall Time20 ns
Forward Transconductance - Min1.9 S
Product TypeMOSFETs
Rise Time10 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time16 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 24 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 1.000 / Multiples: 50)
Quantity Unit PriceExt. Price
0,665 €665,00 €
Need more?

My Notes

Sign into see notes.