Reference Only

SIHD6N65ET4-GE3

MOSFETs 650V Vds E Series DPAK TO-252

Manufacturer:

Mfr Part:
SIHD6N65ET4-GE3

TTI Part:
SIHD6N65ET4-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current7 A
Rds On - Drain-Source Resistance500 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge24 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation78 W
PackagingReel
ConfigurationSingle
Fall Time20 ns
Product TypeMOSFETs
Rise Time12 ns
SeriesSIHD E
SubcategoryTransistors
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 24 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 2.000 / Multiples: 2.000)
Quantity Unit PriceExt. Price
0,85 €1.700,00 €
Need more?

My Notes

Sign into see notes.