Reference Only

SIHF840LCS-GE3

MOSFETs 500V Vds 30V Vgs D2PAK (TO-263)

Manufacturer:

Mfr Part:
SIHF840LCS-GE3

TTI Part:
SIHF840LCS-GE3

EDA / CAD Models

Alternate Part Number

IRF840LCSPBF

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current8 A
Rds On - Drain-Source Resistance850 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge39 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation125 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time19 ns
Forward Transconductance - Min4 S
Product TypeMOSFETs
Rise Time25 ns
SeriesSIHF
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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