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SIHFR430ATRL-GE3

MOSFETs 500V Vds 30V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHFR430ATRL-GE3

TTI Part:
SIHFR430ATRL-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current5 A
Rds On - Drain-Source Resistance1.7 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge24 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation110 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time16 ns
Forward Transconductance - Min2.3 S
Product TypeMOSFETs
Rise Time27 ns
SeriesSIHFR
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17 ns
Typical Turn-On Delay Time8.7 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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