Reference Only

SIHG11N80AEF-GE3

MOSFETs EF Series Power MOSFET With Fast Body Diode

Manufacturer:

Mfr Part:
SIHG11N80AEF-GE3

TTI Part:
SIHG11N80AEF-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247AC-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current5 A
Rds On - Drain-Source Resistance483 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge27 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation78 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time22 ns
Product TypeMOSFETs
Rise Time15 ns
SeriesSIHG EF
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time33 ns
Typical Turn-On Delay Time15 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 28 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 500 / Multiples: 25)
Quantity Unit PriceExt. Price
0,97 €485,00 €
Need more?

My Notes

Sign into see notes.