Reference Only

SIHG20N50E-GE3

MOSFETs 500V Vds 30V Vgs TO-247AC

Manufacturer:

Mfr Part:
SIHG20N50E-GE3

TTI Part:
SIHG20N50E-GE3

EDA / CAD Models

Alternate Part Number

TK20J50D(STA1ES)

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current19 A
Rds On - Drain-Source Resistance184 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge46 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation179 W
Channel ModeEnhancement
PackagingBulk
ConfigurationSingle
Fall Time25 ns
Product TypeMOSFETs
Rise Time27 ns
SeriesSIHG E
SubcategoryTransistors
Typical Turn-Off Delay Time48 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

Technical Resources

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 24 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Bulk

(Minimum: 500 / Multiples: 50)
Quantity Unit PriceExt. Price
1,33 €665,00 €
Need more?
Available Regional Inventory
1.150 available now at tti.com

My Notes

Sign into see notes.