Reference Only

SIHG24N65E-E3

MOSFETs 650V Vds 30V Vgs TO-247AC

Manufacturer:

Mfr Part:
SIHG24N65E-E3

TTI Part:
SIHG24N65E-E3

EDA / CAD Models

Alternate Part Number

SIHG24N65E-GE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247AC-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current24 A
Rds On - Drain-Source Resistance145 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge81 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time69 ns
Product TypeMOSFETs
Rise Time84 ns
SeriesSIHG E
SubcategoryTransistors
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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