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SIHG35N60E-GE3

MOSFETs 600V Vds 30V Vgs TO-247AC

Manufacturer:

Mfr Part:
SIHG35N60E-GE3

TTI Part:
SIHG35N60E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current32 A
Rds On - Drain-Source Resistance82 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge88 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time32 ns
Product TypeMOSFETs
Rise Time61 ns
SeriesSIHG E
SubcategoryTransistors
Typical Turn-Off Delay Time78 ns
Typical Turn-On Delay Time29 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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