Reference Only

SIHG44N65EF-GE3

MOSFETs 650V Vds 30V Vgs TO-247AC

Manufacturer:

Mfr Part:
SIHG44N65EF-GE3

TTI Part:
SIHG44N65EF-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current46 A
Rds On - Drain-Source Resistance63 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge185 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation417 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time100 ns
Product TypeMOSFETs
Rise Time77 ns
SeriesSIHG EF
SubcategoryTransistors
Typical Turn-Off Delay Time157 ns
Typical Turn-On Delay Time46 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 28 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 500 / Multiples: 25)
Quantity Unit PriceExt. Price
5,07 €2.535,00 €
Need more?

My Notes

Sign into see notes.