Reference Only

SIHH11N60E-T1-GE3

MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8

Manufacturer:

Mfr Part:
SIHH11N60E-T1-GE3

TTI Part:
SIHH11N60E-T1-GE3

EDA / CAD Models

Alternate Part Number

TK10V60WLVQ(S

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current11 A
Rds On - Drain-Source Resistance295 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge31 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation114 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time21 ns
Product TypeMOSFETs
Rise Time21 ns
SeriesSIHH E
SubcategoryTransistors
Typical Turn-Off Delay Time39 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 24 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 3.000 / Multiples: 3.000)
Quantity Unit PriceExt. Price
1,40 €4.200,00 €
Need more?

My Notes

Sign into see notes.