Reference Only

SIHK055N60E-T1-GE3

MOSFETs N-CHANNEL 600V

Manufacturer:

Mfr Part:
SIHK055N60E-T1-GE3

TTI Part:
SIHK055N60E-T1-GE3

EDA / CAD Models

Alternate Part Number

SIHK055N60E-X

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPak-9
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current42 A
Rds On - Drain-Source Resistance56 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge54 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation236 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time14 ns
Product TypeMOSFETs
Rise Time40 ns
SeriesSIHK E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Typical Turn-On Delay Time51 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

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Lead Time: 21 Weeks
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Reel

(Minimum: 2.000 / Multiples: 2.000)
Quantity Unit PriceExt. Price
3,27 €6.540,00 €
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