Reference Only

SIHK075N60E-T1-GE3

MOSFETs N-CH SINGLE 600V PPAK10X12

Manufacturer:

Mfr Part:
SIHK075N60E-T1-GE3

TTI Part:
SIHK075N60E-T1-GE3

EDA / CAD Models

Alternate Part Number

SIHK075N60E-X

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-10
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current29 A
Rds On - Drain-Source Resistance70 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge41 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation167 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time12 ns
Forward Transconductance - Min2.3 S
Product TypeMOSFETs
Rise Time26 ns
SeriesSIHK E
SubcategoryTransistors
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time26 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 21 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 2.000 / Multiples: 2.000)
Quantity Unit PriceExt. Price
2,78 €5.560,00 €
Need more?

My Notes

Sign into see notes.