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SIHP065N65E-GE3

MOSFETs N-CH SINGLE 650V TO220AB

Manufacturer:

Mfr Part:
SIHP065N65E-GE3

TTI Part:
SIHP065N65E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current35 A
Rds On - Drain-Source Resistance79 mOhms
Vgs - Gate-Source Voltage30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge80 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time58 ns
Forward Transconductance - Min16 S
Product TypeMOSFETs
Rise Time106 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time84 ns
Typical Turn-On Delay Time58 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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