Reference Only

SIHP12N60E-BE3

MOSFETs N-CH SINGLE 600V TO-220AB

Manufacturer:

Mfr Part:
SIHP12N60E-BE3

TTI Part:
SIHP12N60E-BE3

EDA / CAD Models

Alternate Part Number

SIHP12N60E-GE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance380 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge29 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation147 W
Channel ModeEnhancement
PackagingTube
Fall Time19 ns
Product TypeMOSFETs
Rise Time19 ns
SeriesSIHP E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time14 ns
Part # AliasesSIHP12N60E-GE3 SIHP12N60E-E3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 25 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 1.000 / Multiples: 50)
Quantity Unit PriceExt. Price
0,98 €980,00 €
Need more?
Available Regional Inventory
11.000 available now at tti.com

My Notes

Sign into see notes.