Reference Only
SIHP190N65E-GE3
MOSFETs N-CH SINGLE 650V TO220AB
Datasheet
SIHP190N65E-GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-220AB | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 20 A | |
| Rds On - Drain-Source Resistance | 190 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Qg - Gate Charge | 33 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 179 W | |
| Channel Mode | Enhancement | |
| Tradename | Vishay | |
| Packaging | Tube | |
| Product Type | MOSFETs | |
| Series | SIHP E | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 21 Weeks
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 1.000 / Multiples: 50)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1,35 € | 1.350,00 € |
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