Reference Only

SIHU7N60E-E3

MOSFETs 600V Vds 30V Vgs IPAK (TO-251)

Manufacturer:

Mfr Part:
SIHU7N60E-E3

TTI Part:
SIHU7N60E-E3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-251-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage609 V
Id - Continuous Drain Current7 A
Rds On - Drain-Source Resistance600 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge20 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation78 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time14 ns
Product TypeMOSFETs
Rise Time13 ns
SeriesSIHU E
SubcategoryTransistors
Typical Turn-Off Delay Time24 ns
Typical Turn-On Delay Time13 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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