Reference Only

SIHW040N65E-GE3

MOSFETs N-CH SINGLE 700V TO247AC

Manufacturer:

Mfr Part:
SIHW040N65E-GE3

TTI Part:
SIHW040N65E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247AD-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current65 A
Rds On - Drain-Source Resistance40 mOhms
Vgs - Gate-Source Voltage30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge92 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation391 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time9 ns
Forward Transconductance - Min20 S
Product TypeMOSFETs
Rise Time36 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time105 ns
Typical Turn-On Delay Time50 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 30 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 480 / Multiples: 30)
Quantity Unit PriceExt. Price
3,91 €1.876,80 €
Need more?
Sign in to add notes