Reference Only

SIR876ADP-T1-GE3

MOSFETs 100V Vds 20V Vgs PowerPAK SO-8

Manufacturer:

Mfr Part:
SIR876ADP-T1-GE3

TTI Part:
SIR876ADP-T1-GE3

EDA / CAD Models

Alternate Part Number

SIR876BDP-T1-RE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance9 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge49 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation62.5 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min54 S
Product TypeMOSFETs
Rise Time8 ns
SeriesSIR
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time11 ns
Part # AliasesSIR876ADP-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

12.000In Stock

6.000 expected 25-Aug-26
Please adjust quantity to minimum and multiple values.
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Reel

(Minimum: 3.000 / Multiples: 3.000)
Quantity Unit PriceExt. Price
0,609 €1.827,00 €
0,588 €3.528,00 €
0,579 €5.211,00 €
0,574 €13.776,00 €
0,568 €27.264,00 €
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