Reference Only

SIR876BDP-T1-RE3

MOSFETs N-CH SINGLE 100V PPAK SO-8

Manufacturer:

Mfr Part:
SIR876BDP-T1-RE3

TTI Part:
SIR876BDP-T1-RE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK SO-8-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current51.4 A
Rds On - Drain-Source Resistance12.3 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.4 V
Qg - Gate Charge65 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation71.4 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time22 ns
Product TypeMOSFETs
Rise Time148 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time84 ns
Typical Turn-On Delay Time60 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Lead Time: 54 Weeks
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0,554 €3.324,00 €
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