Reference Only

SIS110DN-T1-GE3

MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8

Manufacturer:

Mfr Part:
SIS110DN-T1-GE3

TTI Part:
SIS110DN-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current14.2 A
Rds On - Drain-Source Resistance54 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge13 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation24 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationSingle
Fall Time5 ns
Forward Transconductance - Min25 S
Product TypeMOSFETs
Rise Time5 ns
SeriesSIS
SubcategoryTransistors
Typical Turn-Off Delay Time14 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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