Reference Only
SIS110DN-T1-GE3
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
Datasheet
SIS110DN-T1-GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | PowerPAK-1212-8 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Id - Continuous Drain Current | 14.2 A | |
| Rds On - Drain-Source Resistance | 54 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Qg - Gate Charge | 13 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 24 W | |
| Channel Mode | Enhancement | |
| Tradename | TrenchFET, PowerPAK | |
| Packaging | Reel | |
| Configuration | Single | |
| Fall Time | 5 ns | |
| Forward Transconductance - Min | 25 S | |
| Product Type | MOSFETs | |
| Rise Time | 5 ns | |
| Series | SIS | |
| Subcategory | Transistors | |
| Typical Turn-Off Delay Time | 14 ns | |
| Typical Turn-On Delay Time | 10 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
0In Stock
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Lead Time: 16 Weeks
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Reel
(Minimum: 6.000 / Multiples: 3.000)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 0,219 € | 1.314,00 € |
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