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SQJ116EP-T1/GE3

MOSFETs N-CH SINGLE 100V PPAKSO8L

Manufacturer:

Mfr Part:
SQJ116EP-T1/GE3

TTI Part:
SQJ116EP-T1/GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK SO-8L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current278 A
Rds On - Drain-Source Resistance3 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge84 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation88 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time4 ns
Forward Transconductance - Min44 S
Product TypeMOSFETs
Rise Time3 ns
SubcategoryTransistors
Transistor Type1-N-Channel
Typical Turn-Off Delay Time18 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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