Reference Only

SUG90090E-GE3

MOSFETs 200V Vds ThunderFET 100A Id +/-20V Vgs

Manufacturer:

Mfr Part:
SUG90090E-GE3

TTI Part:
SUG90090E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current100 A
Rds On - Drain-Source Resistance7.9 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge129 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation395 W
Channel ModeEnhancement
PackagingBulk
ConfigurationSingle
Fall Time40 ns
Forward Transconductance - Min54 S
Product TypeMOSFETs
Rise Time44 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time18 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 41 Weeks
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(Minimum: 500 / Multiples: 500)
Quantity Unit PriceExt. Price
1,90 €950,00 €
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