Reference Only

2SA1941-O(Q)

Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W

Manufacturer:

Mfr Part:
2SA1941-O(Q)

TTI Part:
2SA1941-O(Q)

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max140 V
Collector- Base Voltage VCBO140 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage800 mV
Maximum DC Collector Current10 A
Pd - Power Dissipation100 W
Gain Bandwidth Product fT30 MHz
Maximum Operating Temperature+ 150 C
PackagingBulk
Continuous Collector Current10 A
DC Collector/Base Gain hfe Min35
DC Current Gain hFE Max83
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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