Reference Only

HN4A06J(TE85L,F)

Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A

Manufacturer:

Mfr Part:
HN4A06J(TE85L,F)

TTI Part:
HN4A06J(TE85LF)

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-25-5
Transistor PolarityPNP
ConfigurationDual
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max120 V
Collector- Base Voltage VCBO120 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage300 mV
Maximum DC Collector Current100 mA
Pd - Power Dissipation300 mW
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
SeriesHN4A06
PackagingReel
Continuous Collector Current- 100 mA
DC Collector/Base Gain hfe Min200
DC Current Gain hFE Max700
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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