Reference Only

TJ8S06M3L(T6L1,NQ)

MOSFETs P-Ch MOS -8A -60V 27W 890pF 0.104

Manufacturer:

Mfr Part:
TJ8S06M3L(T6L1,NQ)

TTI Part:
TJ8S06M3L(T6L1NQ)

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current8 A
Rds On - Drain-Source Resistance104 mOhms
Vgs - Gate-Source Voltage- 20 V, 10 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge19 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation27 W
Channel ModeEnhancement
QualificationAEC-Q100
TradenameU-MOSVI
PackagingReel
ConfigurationSingle
Fall Time34 ns
Product TypeMOSFETs
Rise Time6 ns
SeriesTJ8S06M3L
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time140 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

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Lead Time: 26 Weeks
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0,32 €1.280,00 €
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