TK090E65Z,S1X(S Toshiba

TK090E65Z,S1X(S

MOSFETs N-CH SINGLE 650V TO-220

Manufacturer:

Mfr Part:
TK090E65Z,S1X(S

TTI Part:
TK090E65ZS1X(S

EDA / CAD Models

Specifications

DescriptionProduct Attribute
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ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance75 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge47 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation230 W
Channel ModeEnhancement
PackagingTube
Fall Time4 ns
Product TypeMOSFETs
Rise Time30 ns
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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