TK10E80W,S1X(S Toshiba

TK10E80WS1X(S

MOSFETs N-CH SINGLE 800V TO-220AB(OS)

Manufacturer:

Mfr Part:
TK10E80W,S1X(S

TTI Part:
TK10E80WS1X(S

EDA / CAD Models

Specifications

DescriptionProduct Attribute
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ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current9.5 A
Rds On - Drain-Source Resistance35 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge19 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation130 W
Channel ModeEnhancement
TradenameDTMOSVI
PackagingTube
ConfigurationSingle
Fall Time10 ns
Product TypeMOSFETs
Rise Time35 ns
SeriesTK10E80W
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time120 ns
Typical Turn-On Delay Time65 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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