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TK28E65WS1X(S

MOSFETs N-CH SINGLE 650V TO-220

Manufacturer:

Mfr Part:
TK28E65W,S1X(S

TTI Part:
TK28E65WS1X(S

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current27.6 A
Rds On - Drain-Source Resistance110 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge75 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation230 W
Channel ModeEnhancement
TradenameDTMOSIV
PackagingTube
ConfigurationSingle
Fall Time7 ns
Product TypeMOSFETs
Rise Time25 ns
SeriesTK28E65W
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time130 ns
Typical Turn-On Delay Time60 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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