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TK3A90ES4X(S

MOSFETs N-CH SINGLE 900V TO-220SIS

Manufacturer:

Mfr Part:
TK3A90E,S4X(S

TTI Part:
TK3A90ES4X(S

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220SIS-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage900 V
Id - Continuous Drain Current2.5 A
Rds On - Drain-Source Resistance4.6 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge15 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation35 W
Channel ModeEnhancement
TradenameMOSVIII
PackagingTube
ConfigurationSingle
Fall Time15 ns
Product TypeMOSFETs
Rise Time25 ns
SeriesTK3A90E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time55 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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