Reference Only
VS-GT200TS065N
IGBT Modules Modules IGBT - IAP IGBT
Datasheet
VS-GT200TS065N DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | IGBT Modules | |
| Product | IGBT Modules | |
| Configuration | Half Bridge | |
| Collector-Emitter Saturation Voltage | 650 V | |
| Continuous Collector Current at 25 C | 193 A | |
| Gate-Emitter Leakage Current | 240 nA | |
| Pd - Power Dissipation | 517 W | |
| Package / Case | Module | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 175 C | |
| Packaging | Bulk | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Style | Screw Mount | |
| Product Type | IGBT Modules | |
| Subcategory | IGBTs | |
| Technology | Si |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541100000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 15 Weeks
Quantity
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Unit Price
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Ext. Price
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Bulk
(Minimum: 15 / Multiples: 15)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 62,33 € | 934,95 € |
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