Reference Only

BPW85B

Phototransistors T-1 450 to 1080nm +/-25 deg

Manufacturer:

Mfr Part:
BPW85B

TTI Part:
BPW85B

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryPhototransistors
ProductPhototransistors
Package / CaseT-1
Mounting StyleThrough Hole
Peak Wavelength850 nm
Maximum On-State Collector Current50 mA
Collector- Emitter Voltage VCEO Max70 V
Collector-Emitter Breakdown Voltage70 V
Collector-Emitter Saturation Voltage300 mV
Dark Current200 nA
Pd - Power Dissipation100 mW
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 100 C
Light Current4 mA
PackagingBulk
Product TypePhototransistors
SubcategoryOptical Detectors & Sensors
TypeChip
Wavelength850 nm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541497080
TARIC8541409090
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 12 Weeks
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(Minimum: 5.000 / Multiples: 1.000)
Quantity Unit PriceExt. Price
0,123 €615,00 €
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