Reference Only

SISS23DN-T1-GE3

MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8S

Manufacturer:

Mfr Part:
SISS23DN-T1-GE3

TTI Part:
SISS23DN-T1-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current50 A
Rds On - Drain-Source Resistance3.5 mOhms
Vgs - Gate-Source Voltage- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage900 mV
Qg - Gate Charge300 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation57 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationSingle
Fall Time50 ns
Forward Transconductance - Min44 S
Product TypeMOSFETs
Rise Time50 ns
SeriesSISS
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time140 ns
Typical Turn-On Delay Time45 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

3.000
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3.000 expected 26-Aug-26
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Reel

(Minimum: 6.000 / Multiples: 3.000)
Quantity Unit PriceExt. Price
0,296 €1.776,00 €
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