Reference Only
2N3019
Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR
Datasheet
2N3019 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | TT Electronics | |
| Product Category | Bipolar Transistors - BJT | |
| Technology | Si | |
| Package / Case | TO-39-3 | |
| Transistor Polarity | NPN | |
| Configuration | Single | |
| Maximum DC Collector Current | 1 A | |
| Collector- Emitter Voltage VCEO Max | 80 V | |
| Collector- Base Voltage VCBO | 140 V | |
| Emitter- Base Voltage VEBO | 7 V | |
| Maximum DC Collector Current | 1 A | |
| Pd - Power Dissipation | 800 mW | |
| Gain Bandwidth Product fT | 400 MHz | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Product Type | BJTs - Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541210000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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