Reference Only
2N4036-QR
Obsolete
Bipolar Transistors - BJT FET TRANSISTOR
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Cicor | |
| Product Category | Bipolar Transistors - BJT | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-39-3 | |
| Transistor Polarity | PNP | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 65 V | |
| Collector- Base Voltage VCBO | 90 V | |
| Emitter- Base Voltage VEBO | 7 V | |
| Pd - Power Dissipation | 500 mW | |
| Gain Bandwidth Product fT | 60 MHz | |
| Minimum Operating Temperature | - 65 C | |
| Maximum Operating Temperature | + 200 C | |
| Continuous Collector Current | 1 A | |
| DC Collector/Base Gain hfe Min | 20 at 150 mA, 2 V | |
| DC Current Gain hFE Max | 200 at 150 mA, 2 V | |
| Product Type | BJTs - Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290095 |
| TARIC | 8541210000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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