Reference Only

2N5415

Obsolete
Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR

Manufacturer:

Mfr Part:
2N5415

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerCicor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-39-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max200 V
Collector- Base Voltage VCBO200 V
Emitter- Base Voltage VEBO4 V
Pd - Power Dissipation1 W
Gain Bandwidth Product fT15 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
Continuous Collector Current- 1 A
DC Collector/Base Gain hfe Min30 at - 50 mA, - 10 V
DC Current Gain hFE Max150 at - 50 mA, - 10 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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