Reference Only

2SA1160-B(TE6,F,M)

Obsolete
Bipolar Transistors - BJT PNP 10V 2A Transistor

Manufacturer:

Mfr Part:
2SA1160-B(TE6,F,M)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseLSTM-3
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max10 V
Collector- Base Voltage VCBO20 V
Emitter- Base Voltage VEBO6 V
Maximum DC Collector Current2 A
Pd - Power Dissipation900 mW
Gain Bandwidth Product fT140 MHz
Maximum Operating Temperature+ 150 C
Series2SA1160
DC Collector/Base Gain hfe Min200 at 500 mA, 1 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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