2SC5588(Q,M) Toshiba

2SC5588(Q,M)

Obsolete
Bipolar Transistors - BJT Transistor NPN 1700V 15A

Manufacturer:

Mfr Part:
2SC5588(Q,M)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max800 V
Collector- Base Voltage VCBO1.7 kV
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current15 A
Pd - Power Dissipation75 W
Gain Bandwidth Product fT2 MHz
Maximum Operating Temperature+ 150 C
Series2SC5588
DC Collector/Base Gain hfe Min22 at 2 A, 5 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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