Reference Only
2SK880-BL(TE85L,F)
JFETs N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA
Datasheet
2SK880-BL(TE85L,F) DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | JFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SC-70 | |
| Transistor Polarity | N-Channel | |
| Vds - Drain-Source Breakdown Voltage | 10 V | |
| Vgs - Gate-Source Breakdown Voltage | - 50 V | |
| Gate-Source Cutoff Voltage | - 200 mV | |
| Drain-Source Current at Vgs=0 | 1.2 mA | |
| Id - Continuous Drain Current | 500 uA | |
| Pd - Power Dissipation | 100 mW | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 125 C | |
| Series | 2SK880 | |
| Packaging | Reel | |
| Maximum Drain Gate Voltage | - 50 V | |
| Product Type | JFETs | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541210095 |
| TARIC | 8541210000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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Reel
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