Reference Only

BDS13-B

Obsolete
Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR

Manufacturer:

Mfr Part:
BDS13-B

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerCicor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220M-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max60 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage3 V
Pd - Power Dissipation43.75 W
Gain Bandwidth Product fT3 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
Continuous Collector Current- 15 A
DC Collector/Base Gain hfe Min15 at -5 A, - 4 V
DC Current Gain hFE Max150 at - 5 A, - 4 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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