Reference Only

BDS17-QR-B

Obsolete
Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR

Manufacturer:

Mfr Part:
BDS17-QR-B

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerCicor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220M-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max150 V
Collector- Base Voltage VCBO150 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.5 V
Pd - Power Dissipation43.75 W
Gain Bandwidth Product fT30 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
DC Collector/Base Gain hfe Min15 at 4 A, 2 V
DC Current Gain hFE Max150 at 4 A, 2 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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