Reference Only

BDY58S

Obsolete
Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR

Manufacturer:

Mfr Part:
BDY58S

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerCicor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3-2
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max125 V
Collector- Base Voltage VCBO160 V
Emitter- Base Voltage VEBO10 V
Collector-Emitter Saturation Voltage1.4 V
Maximum DC Collector Current6 A
Pd - Power Dissipation175 W
Gain Bandwidth Product fT7 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
Continuous Collector Current25 A
DC Collector/Base Gain hfe Min20 at 10 A, 4 V
DC Current Gain hFE Max60 at 10 A, 4 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NamePb

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