Reference Only
HN1B01F-Y(TE85L,F)
Bipolar Transistors - BJT Dual Trans PNP NPN SM6, -50V, -0.15A.
Datasheet
HN1B01F-Y(TE85L,F) DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | Bipolar Transistors - BJT | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SM-6 | |
| Transistor Polarity | NPN, PNP | |
| Configuration | Dual | |
| Maximum DC Collector Current | 150 mA | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Collector- Base Voltage VCBO | 50 V | |
| Emitter- Base Voltage VEBO | 5 V | |
| Collector-Emitter Saturation Voltage | 100 mV | |
| Maximum DC Collector Current | 150 mA | |
| Pd - Power Dissipation | 300 mW | |
| Gain Bandwidth Product fT | 80 MHz | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 125 C | |
| Series | HN1B01 | |
| Packaging | Reel | |
| DC Collector/Base Gain hfe Min | 120 | |
| DC Current Gain hFE Max | 400 | |
| Product Type | BJTs - Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541210095 |
| TARIC | 8541210000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Quantity
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Unit Price
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Ext. Price
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Reel
(Minimum: 3.000 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 0,099 € | 297,00 € | |
| 0,086 € | 516,00 € | |
| 0,076 € | 684,00 € | |
| 0,056 € | 1.344,00 € |
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