Reference Only

HN1B01FU-Y,LXHF

Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6).

Manufacturer:

Mfr Part:
HN1B01FU-Y,LXHF

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseUS-6
Transistor PolarityNPN, PNP
ConfigurationDual
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT120 MHz, 150 MHz
Maximum Operating Temperature+ 125 C
QualificationAEC-Q200
PackagingReel
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min120 at 2 mA, 6 V
DC Current Gain hFE Max400 at 2 mA, 6 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # AliasesHN1B01FU-Y,LXHF(B

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 16 Weeks
Please adjust quantity to minimum and multiple values.
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Reel

(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,062 €186,00 €
0,055 €330,00 €
0,047 €423,00 €
0,044 €1.056,00 €
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