Reference Only

HN1B04FE-GR,LXHF

Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6).

Manufacturer:

Mfr Part:
HN1B04FE-GR,LXHF

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseES-6
Transistor PolarityNPN, PNP
ConfigurationDual
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Pd - Power Dissipation100 mW
Gain Bandwidth Product fT80 MHz
Maximum Operating Temperature+ 150 C
QualificationAEC-Q200
PackagingReel
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min120 at 2 mA, 6 V
DC Current Gain hFE Max400 at 2 mA, 6 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # AliasesHN1B04FE-GR,LXHF(B

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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