Reference Only

HN1C03FU-B,LF

Bipolar Transistors - BJT .

Manufacturer:

Mfr Part:
HN1C03FU-B,LF

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseUS-6
Transistor PolarityNPN
ConfigurationDual
Maximum DC Collector Current300 mA
Collector- Emitter Voltage VCEO Max20 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO25 V
Collector-Emitter Saturation Voltage42 mV
Maximum DC Collector Current300 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT30 MHz
Maximum Operating Temperature+ 150 C
QualificationAEC-Q101
SeriesHN1C03
PackagingReel
DC Collector/Base Gain hfe Min200
DC Current Gain hFE Max1200
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

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Reel

(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,063 €189,00 €
0,057 €342,00 €
0,048 €432,00 €
0,046 €1.104,00 €
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